Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons
نویسندگان
چکیده
Mechanisms responsible for the contrast between differently doped areas in semiconductors, which is observed in electron micrographs, is discussed as regards the key factors determining the sign and magnitude of the contrast. Experimental data obtained by means of the scanning electron microscope (SEM), scanning low energy electron microscope and photoelectron emission microscope are reviewed together with hints following from them for compilation of a model of the contrast mechanism. [doi:10.2320/matertrans.48.936]
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